EPP Small Experiments Document 613-v2

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Depletion depth

Document #:
EPP-doc-613-v2
Document type:
Memo
Submitted by:
David Christian
Updated by:
David Christian
Document Created:
16 Oct 2008, 13:42
Contents Revised:
16 Oct 2008, 15:16
Metadata Revised:
16 Oct 2008, 15:16
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EPP-doc-613-v1
16 Oct 2008, 13:42
Abstract:
Calculation of depletion depth in n-bulk silicon for planar diode geometry.

Depth in microns is approximately .5*sqrt(rho*V) where rho is the bulk resistivity in ohm-cm & V is the reverse bias voltage in volts.

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